hanbit hmf1m32 f2vc url:www.hbe.co.kr - 1 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) general description the hmf1m32 f2vc is a high - speed flash read only memory (from) module containing 2,097,152 words organized in a x32bit configuration. the module consists of two 1m x 16 from mounted on a 80 - pin stackable type , single - side d, fr4 - printed circuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also int ernally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the ho st system can detect a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition the module is becoming power standby mode, system designer can g et low - power design. all module components may be powered from a single + 3.0 v dc power supply and all inputs and outputs are lv ttl - compatible. features pin assignment f lash - rom m odule 4mbyte (1m x 32bit) , 80pin - mmc, 3.3v design part no. hmf1m32f 2vc p1 p2 pin symbol pin symbol pin symbol pin symbol 1 vcc 21 vcc 1 vcc 21 vcc 2 /ce 22 dq15 2 dq16 22 nc 3 nc 23 dq7 3 dq24 23 nc 4 nc 24 dq14 4 dq17 24 /byte 5 nc 25 dq6 5 dq25 25 /oe 6 /ry_by 26 dq13 6 dq18 26 nc 7 vs s 27 vss 7 vss 27 vss 8 /reset 28 dq5 8 dq26 28 a16 9 /we 29 dq12 9 dq19 29 a0 10 a19 30 dq4 10 dq27 30 a18 11 a8 31 dq11 11 dq20 31 a17 12 a9 32 dq3 12 dq28 32 a7 13 a10 33 dq10 13 dq21 33 a6 14 vss 34 vss 14 vss 34 vss 15 a11 35 dq2 15 dq29 35 a5 16 a12 36 dq9 16 dq22 36 a4 17 a13 37 dq1 17 dq30 37 a3 18 a14 38 dq8 18 dq23 38 a2 19 a15 39 dq0 19 dq31 39 a1 20 vcc 40 vcc 20 vcc 40 vcc w part identification - hmf1m32f2vc : socket 5mm w access time: 70, 80, 90 , 120ns w high - density 4mbyte design w high - reliability, low - power design w single + 3.0 v 0. 3 v power supply w all in / outputs are lv ttl - compatible w fr4 - pcb design w 80 - pin designed by 40 - pin fine pitch connector (x 2ea) w min imum 1 ,0 00,000 write/erase cycle w sector erases architecture options marking w timing 70 n s access - 70 80 n s access - 80 90 n s access - 90 120 n s access - 120 w packages 80 - p in s mm f
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 2 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) functional block dia gram dq 0 - dq 31 a 0 C a 19 32 a0 - 19 /we /oe dq 0 - 15 /ce u1 ry - by / reset a0 - 19 /we /oe dq 16 - 31 /ce u 2 ry - by / reset / we 20 / oe /c e /ry_by /reset
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 3 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) truth table mode /oe /ce /we /res et dq ( /byte=l ) power standby x h x vcc 0.3v high - z standby not selected h l h h high - z active read l l h h d out active write or erase x l l h d in active note : x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 0. 5 v to vcc+0.5 v voltage with respect to ground vcc v cc - 0.5 v to + 4 .0v storage temperature t stg - 65 o c to +1 50 o c operating temperature t a - 55 o c to +125 o c w stresses greater than those listed u nder " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc opera ting conditions parameter symbol min typ . max vcc for 10% device supply voltages vcc 2.7v 3.6v ground v ss 0 0 0 dc and operating charac teristics ( 0 o c t a 70 o c ) parameter test conditions symbol min max unit input load current vcc=vcc max, v in = gnd to vcc i l1 1.0 m a output leakage current vcc=vcc max, v out = gnd to vcc i l0 1.0 m a output high voltage i oh = - 2. 0 ma, vcc = vcc min v oh 2.4 v output low voltage i ol = 4.0 ma, vcc =vcc min v ol 0.45 v 5mhz 18 32 vcc active read current (1) /ce = v il , /oe = v ih , 1mhz i cc1 4 8 ma vcc active write curren t (2) /ce = v il , /oe=v ih i cc2 40 60 ma vcc standby curre nt /ce, /reset=vcc 0.3v i cc3 60 ma low vcc lock - out voltage v lko 2.3 2.5 v notes : 1. the i cc current listed is typically less than 2ma/mhz, with /oe at v ih . 2 . i cc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 4 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec chip erase time 25 sec excludes 00h programming prior to erasure byte programming time - 9 3 00 m s chip programming time - 18 54 sec excludes system - level overhead tsop capacitance parameter symbol parameter descrip tion test setup min max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8 .5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics u read only operations characteristics parameter symbols s peed options jedec standard description test setup - 70 r - 80 - 90 - 120 unit t avav t rc read cycle time min 70 80 90 120 ns t avqv t acc address to output delay /ce = v il /oe = v il max 70 80 90 120 ns t elqv t ce chip enable to output delay /oe = v il max 70 80 90 120 ns t glqv t oe chip enable to output delay max 30 30 35 35 ns t ehqz t df chip enable to output high - z max 25 25 30 30 ns t ghqz t df output enable to output high - z max 25 25 30 30 ns t axqx t qh output hold time from addresses, /c e or /oe, whichever occurs first min 0 ns test specifications test condition 70r, 80 90, 120 unit output load 1ttl gate output load capacitance,c l (including jig capacitance) 30 100 pf input rise and full times 5 ns input pulse levels 0.0 - 3.0 v in put timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 5 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) u erase/program operations parameter symbols s peed options jedec standard description 70r 80 90 120 unit t avav t wc write cycle time mi n 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recove r time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec t v cs vcc set up time min 50 m s notes : 1 . this does not include the preprogramming time 2 . this timing is only for sector protect operations 5.0v device under test 2.7k w diodes = in3064 or e quivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 6 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) u erase/program operations alte rnate /ce controlled writes parameter symbols s peed options jedec standard description - 70r - 80 - 90 120 unit t avav t wc write cycle time min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp w rite pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec notes : 1. this does not include the preprogramming time 2 . this timing is only for sector protect operations
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 7 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) package dimensions 1.30
hanbit hmf1m32 f2vc url:www.hbe.co.kr - 8 - hanbit electronics co., ltd. rev.2.0 ( october, 2002 ) o r dering information part number density org. package component number vcc speed hmf1 m32f2vc - 70 4mbyte x 32 80pin C smm 2ea 3.3v 70ns hmf1m32f2vc - 80 4mbyte x 32 80pin C smm 2ea 3.3v 80ns hmf1m32f2vc - 90 4mbyte x 32 80pin C smm 2ea 3.3v 90ns hmf1m32f2vc - 120 4mbyte x 32 80pin - smm 2ea 3.3v 120ns
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